Component Details
Component |
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EPPL Part: | 2 | |||
Part Number: | GH50-10 transistor process | |||
Group: | MICROCIRCUITS | Subgroup: | MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC) | |
Part type: | Package: | |||
Description: | ||||
ESCC Specifications: |
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Other Specifications: | ||||
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Manufacturer: | ||||
Ref. number: | ||||
1633759568778810401 | ||||
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Approval Status
Qualification: |
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Others | |||
Other: | |||
Highest screening level (MIL): | |||
An audit of the line has been conducted at UMS Ulm in February 2012. | |||
Evaluation programmes or other approvals: | |||
A Relibility test campaign based on ESCC 2269010 was performed under the supervision of DGA, CNES and ESA. This test plan (300 components issued from 8 runs, 16 wafers tested, 80 000 hours of life test) was built to determine the safe operating areas of the technology (including ROR and AMR) | |||
Former space usage: | |||
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Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...): |
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Test Summary:Storage (1000h @250°C and 300°C on PCM) and storage (6000h @250°C) on 50W power bar: Ea=2.1eV, MTF=1100yearsHumidity test on TCV (85%/85°C 1000h): no failureHumidity test on DEC (85%/85°C 1000h): no failure Humidity test on 50W power bar (85%/85°C 1000h): no failure Thermal cycles on TCV (1000 x -65/+125°C): no failureThermal cycles on 50W power bar (500 x -55/+125°C): no failureHigh temperature reverse bias test on DEC V1 up to 100V of Vds, Vgs =-7V @175°C: no failure up to 3000h, some failures before 2000h at Vds=120VHigh temperature reverse bias test on DEC V3 up to 120V of Vds, Vgs=-7V @ 175°C: no failure up to 2000h, no failure up to 6000h at Vds=100V Aging tests on DEC V1 (up to 3000h and up to Tj=335°C): wear out (run away mechanism identified Ea=1.82eV)DC life-test on DEC V1 Tj=245°C Vds=50V: first failure at 3900hDC life-test on DEC V1 Tj=211°C Vds=50V: 6600h (one extrinsic failure)DC life-test on DEC V3 Tj=205°C Vds=50V: no failure up to 5997hDC life test on 40W power Tj=223°C Vds=50V: no failure up to 2580hDC step stress on DEC V1 125°C: up to Vds=100V (48h/step) no failureRF Step stress DEC V3 à 50°C (AMR): failure at Vds=60V and for compression =PAEmax+2dB RF life-test on DEC V1 at Vds=50V (2000h @ Tj=205°C): no failureRF life-test on 40W power bar at Vds=50V (1000h @ Tj=193°C): no failure | |||
Radiation Hardness Data
Total Dose Effects: |
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As in annex | |||
Displacement damage: | |||
Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others): | |||
As in annex | |||
Remarks |
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