Wide Band Gap: ESTEC Components Division

ESA Components Division Activities on Wide Band Gap Technologies

The following table summarises the on-going activities

Domain	Title	Prime contractor	Objective	Additional information	Status
GaN	Athena	IMEC	Activity to develop high quality epitaxial growth techniques	PDF	Ongoing
GaN	Noise assessment of GaN structures	QinetiQ	Assessment of the low frequency and RF noise performance of wide bang gap devices, including receiver overdrive measurements, transmit/receive module simulation, oscillator phase noise eveluation	PDF	Completed
GaN	Noise assessment of GaN structures	Thales	Assessment of the low frequency and RF noise performance of wide bang gap devices, including receiver overdrive measurements, transmit/receive module simulation, oscillator phase noise eveluation	PDF	Completed
GaN and SiC	Power and thermal management of wide band gap semiconductors	Inasmet	Investigation and demonstration of novel thermal management techniques	Benoît Lambert	Ongoing
GaN	X-band TT+C SSPA	TESAT and FBH	Development of a hermetically packaged transistor family for realisation of a 30W X-band power amplifier	PDF	Ongoing
GaN	EPI-GaN	IMEC	Establish a small scale production facility for supply of GaN epitaxial wafers	PDF	Ongoing
GaN	Microwave frequency capability of wide band gap semiconductors	TNO and IAF	Investigation of the microwave and mm-wave frequency potential of GaN HEMTs; device demonstration at 30GHz, 60GHz and 94GHz	PDF	Ongoing
SiC	Components for High Power Conditioning Applications	Crisa	Investigation of P-doped material and metallization scheme, enabling development and characterisation of JBS (Junction Barrier Schottky) diode, PIN diode and bipolar transistor.	Benoît Lambert	Ongoing