GaN and SiC Patents

GaN and SiC Patents

Patent searches have been carried out by ESA related to Gallium Nitride and Silicon Carbide

The period covered is 1978 through 2001, and the resulting records have been arranged in five separate groups, each in reverse order, most recent first.

Group 1 GaN SiC	European patent applications that may become, or are, patents in the countries designated.
Group 2 GaN SiC	International (PCT) patent applications designating European countries that may become, or are, patents in the countries designated.
Group 3 GaN SiC	Patent applications filed only in Germany that may become, or are, German patents, together with their English language record.
Group 4 GaN SiC	Relevant US patents that have no correspondents in Europe, primarily for information.
Group 5 GaN SiC	Relevant Japanese patent applications that have no correspondents in Europe, nor in the US, for information purposes.
Update GaN 2001	Updated information from 2001 on GaN for group 1, 2 and 4.

Within the development of European activity in the field of Gallium Nitride or Silicon Carbide crystal growth, account should be taken in the first place of the patents in Group 1, 2 and 3, since patents rights could be, or become, in force in certain European countries.

Patents in Groups 4 and 5 give an indication of technologies protected only in United States and Japan, and which are not protected in Europe. In principle these technologies can be used freely, except for exportation to the United States or Japan.

In general, patents are valid 20 years from the date of filing, provided that maintenance and other fees have been duly paid.

The work of P.A. Kallenbach (ESA-HQ) who carried out these searches is acknowledged with thanks.