Event/Activity
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Technical Officer
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Organization
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Title
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Radiation Evaluation of DDR/DDRII SDRAM Memories
March 13th, 2006
|
Reno Harboe-Sorensen
ESA/ESTEC
|
ESA / ESTEC |
 Introduction & Background |
|
EADS / IDA |
Present Status of Solid State Mass Memories & Near Future Needs |
|
IDA |
Aspects of Future Memory Module Architecture |
|
Hirex |
Radiation Evaluation of DDR / DDR2 SDRAM Memories |
|
EADS / IDA |
Non-Volatile Flash Memory Module Safeguard Data Recorder |
|
Hirex |
Minute of Meeting - ESTEC 13/03/2006 |
Studies of Radiation SEE Effects in NAND-FLASH and DDR Types of Memories
2007-2009
|
Reno Harboe-Sorensen
Véronique Ferlet-Cavrois
ESA/ESTEC
|
Techn Univ.
Braunschweig |
Functional TID Test of 4 x 8-Gbit Samsung NAND-Flash Memory Devices (K9WBG08U1M-PIB0/TSOP 1-48) |
|
Heavy Ion SEE Test of 4 x 8-Gbit Samsung NAND-Flash Memory Devices (K9WBG08U1M-PIB0/TSOP 1-48) |
|
About the Probability of Destructive Failure Occurrence of 8–Gbit Samsung NAND-Flash Memory Devices in Space
|
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Proton Test of 4 x 8-Gbit Samsung NAND-Flash Memory Devices K9WBG08U1M-PIB
|
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Heavy Ion Test of 2-Gbit Micron DDR2-SDRAM Devices MT47H256M8 |
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Dependence of the Samsung and Micron 8-Gbit NAND-Flash SEU Rate on the Incidence Angle of Heavy Ions |
|
Destructive Failures of Micron 8-Gbit NAND-Flash Memory Devices
|
|
Heavy Ion SEE Test of 2 -Gbit DDR2 SDRAM Devices |
Radiation hard memory Radiation testing of candidate memory devices for Laplace mission
2009-2014
|
Véronique Ferlet-Cavrois
ESA/ESTEC
|
Airbus |
Radiation Hard Memory - Radiation testing of candidate memory devices for Laplace mission
Final Synthesis Report |
|
Univ. Padova |
TID and SEE Report on Micron MT29F32G08CBACA Multi-Level-Cell NAND Flash Memory Micron MT29F32G08CBACA |
|
TID and SEE Report on Micron MT29F16G08ABABA Single-Level-Cell NAND Flash Memory Micron MT29F16G08ABABA |
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TID and SEE Report Numonyx Omneo P8P Phase Change Memory Micron Omneo P8P |
|
Destructive SEE Report on Micron MT29F32G08ABAAA Single-Level-Cell NAND Flash Memory |
|
Techn Univ.
Braunschweig
IDA
|
DDR3 |
TID Test of 4 Gbit DDR3 SDRAM Devices - Test report |
|
Heavy Ion SEE Test of 4 Gbit DDR3 SDRAM Devices |
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Heavy Ion SEE Test of 2-Gbit and 4-Gbit DDR3 SDRAM Devices |
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Proton SEE Test of 4-Gbit DDR3 SDRAM Devices from Hynix, Micron and Samsung |
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Unbiased TID Test of 2-Gbit and 4-Gbit DDR3 SDRAM Devices - Proposal for Revision of the Test Strategy |
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In-situ and unbiased TID Test of 4-Gbit DDR3 SDRAM Devices |
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Unbiased preselection TID Test of 4-Gbit DDR3 SDRAM Devices - Approach for in-situ test |
|
NAND flash |
Heavy Ion SEE Test of 2-Gbit DDR3 SDRAM Devices and of 8-Gbit NAND-Flash Memory Devices
|
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Heavy Ion SEE Test of 16-Gbit/32-Gbit Micron SLC NAND-Flash Memory Devices
|
|
Heavy Ion SEE Test of 4 x 8-Gbit Samsung and 16-Gbit Micron SLC NAND-Flash Memory Devices |
|
Functional TID Test of 16-Gbit/32-Gbit Micron SLC NAND-Flash Memory Devices |
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Proton Test of 16-Gbit/32-Gbit Micron SLC NAND-Flash Memory Devices |
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DDR3 and NAND flash summary |
Radiation Hard Memory (RHM) Comparison between NAND-Flash and DDR3 SDRAM Test Results |
